Overview
Applications
- Security Code Storage
- Program Storage
- Analog Trimming
- Gamma Correction
- Memory Repair
- Feature Selection
- Patch Code
- Chip ID
- DRM
- HDMI Decode
Benefits
- Smallest Si area
- Tamper-resident by invisible charge trap memory mechanism
- Non-rewritable hardware safety lock
- No charge pump required in read operation
- Built-in-self-test circuit supports stress-free test environments.
- All bits fully testable with conventional test equipments
- Automotive grade data retention over 150 deg C.
Technology Comparison
TwinBit eFLASH 1Poly EEPROM
Bit Area 1 1 100
Retention 10 Year 10 Year 10 Year
P/E 100K Cycle 10K Cycle 100K Cycle
Add. Mask None +10 Mask None
Add. Process None None Stacked Poly None
Read Cycle 50MHz 50MHz 30MHz
Operational Temp. 150ºC 150ºC 85-150ºC
Storage 150ºC 150ºC 85-150ºC
Program Voltage 5.5V 10V 20V
Read Byte Byte Byte
Program Byte/Page Block Byte
Erase Byte/Block Block Byte
TwinBit eFLASH
Campatibility with Standard IPs Compatible Not Compatible
Development TAT Short Very Long
Manufacuring Cost Low (+0%) High (+30-50%)
Leading Edge Process Available Not Available