Program Mechanism

When nMOSFET turns ON, hot-electrons are generated and trapped in side-wall spacer.

 Read Mechanism

Trapped electrons generate the energy barrier to shift Vt and reduce the ON current.

Erase Mechanism

When Gate is negatively biased, hot-holes are injected into the spacer and recombine with the trapped electrons.

Program Operation

Program current flows in one transistor in a cell and generate hot-carriers.

 Read Operation

Both bit-lines are pre-charged and current flows through selected cell transistors.

→ Sense amplifier senses current difference and latches.

Erase Operation

When all word-lines are negatively biased in the sector, all the bit-cells are erased at the same time.