NSCore's PermSRAM® is a high-speed and high-density nonvolatile memory macro using standard CMOS processes without any extra mask.
- Smallest multi-time programmable (MTP) nonvolatile memory ever invented
- SRAM-like interfance
- Fast read/write time
- Scalable to 65nm generation and beyond
- Fully testable with conventional tester without UV radiation exposure
| PermSRAM® | Laser Fuse | Pory eFuse | Cap eFuse | FG-NVM (eMemory) |
|
|---|---|---|---|---|---|
| Program scheme | HC injection | Laser power | Current power | Current power | HC injection |
| Programmed information |
Trapped charge | Resistance change | Resistance change | Resistance change | Floating charge |
| Field programmable |
Yes | No | No | No | Yes |
| Scalability | Good | Bad | Bad | Good | Fair |
| Additional process |
No | Fuse window | No | No | No |
| Program voltage | 4-5V | - | 5-7V | 5-8V | 6-7V |
| Program current | < 100uA | - | 1-10mA | 100-1000uA | 150uA |
| Program time | < 10us/bit | 100ms/bit | 10ms/bit | 10-100us/bit | 100us/bit |
PermSRAM® has a wide range of applications including the list below.
- Security code storage
- Program storage
- Analog trimming
- Gamma correction
- Memory repair
- Feature selection
- Patch code
- Chip ID
- Digital rights management (DRM)
- HDMI decode
- And more …
Silicon-proven IPs having following features are available in foundry's 0.18um, 0.13um, 90nm, and 65nm processes.
- Memory capacity: 64b to 512Kb
- Programmable Time: One time and 4 Times
- DIN/DOUT Port: 8b/16b/64b
