(posted on Apr 2, 2012)
Visit NSCore at the 2012 TSMC North America Technology Symposium.
April 17 (Tue) – San Jose, CA (Booth #304)
April 24 (Tue) – Boston (Waltham), MA
April 26 (Thu) – Austin, TX
(posted on Jan 24, 2011)
NSCore and its US sales partner Laflin Limited will have a booth at DesignCon 2011, held its exhibition from February 1 to 2, 2011, at Santa Clara Convention Center in Santa Clara, CA.
For more information on DesignCon 2011, visit the website athttp://designcon.techinsightsevents.com/.
(posted on Aug 10, 2010)
Fukuoka, Japan – NSCore, Inc., a leading provider of non-volatile memory (NVM) intellectual property (IP), has announced that the cumulative shipment equipped with its PermSRAM® non-volatile memory IP has exceeded the 55milion pieces threshold. With its reliable programming, 10+ year lifetime, and read voltages down to 1.0V, PermSRAM® has proven to be a technology leader in the one time programmable (OTP) NVM marketplace.
Primary production nodes today are the 130nm and 180nm generations and licensees are mass-producing about 5milion pieces a month. Mass production for the 65nm process generation will be launched in Q1 2011. The majority of shipped devices thus far are in the 1Kbit to 32Kbit density range and are primarily used in the flat panel display market.
In the second half of 2010, PermSRAM® volume shipments will expand to the 256bit fuse type macro used for power controllers which require very accurate trimming after packaging. PermSRAM® is well suited for this type of application with its field programmable capability and provides advantages over traditional fuse technology that has to be programmed before packaging.
About PermSRAM® and NSCore, Inc.
Founded in 2004, NSCore develops, licenses, and markets innovative non-volatile memory technologies for SoC semiconductors which are implemented on high volume, standard CMOS processes without extra steps, masks or process modifications. NSCore’s patented PermSRAM® offers the optimum combination of extremely small macro size, fast READ/WRITE and also fully testable solution. PermSRAM®’s excellent process portability, high yield and automotive level reliability gives SoC design engineers the tools to conceive and build cost effective products with very short TAT. For more information, please visit www.nscore.com.
(posted on Jul 1, 2010)
The latest version of datasheets can be downloaded on either website. Please follow the procedure explained by the website to download.
(posted on Jan 28, 2010)
NSCore NVM IP validated as “Ready for IBM Technology”
FUKUOKA, Japan — NSCore, Inc., a leading provider of non-volatile, one-time programmable (OTP) memory announced today that its PermSRAM® non-volatile memory intellectual property (IP) has been validated as “Ready for IBM Technology” for IBM’s 0.18 micron CMOS foundry technology.
“Achieving the ‘Ready for IBM Technology’ mark is a significant milestone and one that benefits both NSCore and IBM customers”
The “Ready for IBM Technology” program is designed to help customers speed time to market, reduce development risk and lower development costs. The “Ready for IBM Technology” designation, as used by NSCore, signifies that PermSRAM has been tested and validated in silicon and has met compatibility and integration specifications established by IBM for 0.18 micron CMOS foundry process technologies.
“Achieving the ‘Ready for IBM Technology’ mark is a significant milestone and one that benefits both NSCore and IBM customers,” said Tada Horiuchi, President and CEO of NSCore. “IC designers looking to enhance and differentiate their mixed signal and digital IC’s in IBM’s 0.18 micron CMOS process now have access to qualified high yielding, reliable non-volatile memory.”
NSCore will be exhibiting at DesignCon at the Santa Clara Convention Center on February 2-3 (http://www.designcon.com/2010/attendees/pages/nscore.asp). Customers interested in learning more about NSCore and its “Ready for IBM Technology” NVM IP are encouraged to visit the company’s booth #321.
About PermSRAM® and NSCore, Inc.
Founded in 2004, NSCore develops, licenses, and markets innovative non-volatile memory technologies for SoC semiconductors which are implemented on high volume, standard CMOS processes without extra steps, masks or process modifications. NSCore’s patented PermSRAM® offers the optimum combination of extremely small macro size, fast READ/WRITE, and is fully testable. PermSRAM’s excellent process portability, high yield, and automotive level reliability give SoC design engineers the flexibility and confidence to conceive and build cost effective products with very short turn-around time. For more information, please visit www.nscore.com.
PermSRAM is a registered trademark of NSCore, Inc. IBM and “Ready for IBM Technology” are trademarks of International Business Machines Corporation in the United States, other countries, or both. All other trademarks or registered trademarks are the property of their respective owners.
Rick Ader, U.S. Sales Manager